蒸鍍,濺鍍,真空鍍膜物質使用對照表,PVD Table

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蒸鍍,濺鍍,真空鍍膜物質使用對照表 PVD Table

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物理氣相沉積法(Physical Vapor Deposition)

分為:濺鍍(Sputtering)及蒸鍍(Evaporation)是在高真空狀況下，利用電阻或電子束加熱,將所要蒸鍍的材料,以達到熔化溫度，使之熔解並氣化，氣態之薄膜材料之原子或分子因同時具有加溫後的動能附著在基板表面上的鍍膜技術。熱電阻式蒸鍍及電子束蒸鍍為常見之兩種方式:

08. Cobalt Chloride CoCl2,Cobalt Oxide CoO,Copper Cu,Copper Chloride CuCl,Copper Oxide Cu2O,Copper Sulfide Cu2S,Cryolite Na3AlF6,Dysprosium Dy,Dysprosium Fluoride DyF3,Dysprosium Oxide Dy2O3,Erbium Er,Erbium Fluoride ErF3, More Detail

09. Erbium Oxide Er2O3,Europium Eu,Europium Fluoride EuF2,Europium Oxide Eu2O3,Europium Sulfide EuS,Gadolinium † Gd,Gadolinium Carbide GdC2,Gadolinium Oxide Gd2O3,Gallium Ga,Gallium Antimonide GaSb,Gallium Arsenide GaAs,Gallium Nitride GaN, More Detail

10. Gallium Oxide Ga2O3,Gallium Phosphide GaP,Germanium Ge,Germanium (II) Oxide GeO,Germanium (III) Oxide GeO2,Germanium Nitride Ge3N2,Germanium Telluride GeTe,Glass, Gold Au,Hafnium Hf,Hafnium Boride HfB2,Hafnium Carbide HfC, Schott® 8329, More Detail

11. Hafnium Nitride HfN,Hafnium Oxide HfO2,Hafnium Silicide HfSi2,Holmium Ho,Holmium Fluoride HoF3,Holmium Oxide Ho2O3,Inconel® Ni/Cr/Fe,Indium In,Indium (I) Oxide In2O,Indium (III) Oxide In2O3,Indium (I) Sulfide In2S,Indium (II) Sulfide InS, More Detail

12. Indium (III) Sulfide In2S3,Indium (II) Telluride InTe,Indium (III) Telluride In2Te3,Indium Antimonide InSb,Indium Arsenide InAs,Indium Nitride InN,Indium Phosphide InP,Indium Selenide In2Se3,Indium Tin Oxide In2O3/SnO2 90/10 wt %,Iridium Ir,Iron Fe,Iron (II) Oxide FeO, More Detail

13. Iron (III) Oxide Fe2O3,Iron Bromide FeB2,Iron Chloride FeCl2,Iron Iodide FeI2,Iron Sulfide FeS,Kanthal FeCrAl,Lanthanum La,Lanthanum Boride LaB6,Lanthanum Bromide LaBr3,Lanthanum Fluoride LaF3,Lanthanum Oxide La2O3,Lead Pb, More Detail

14. Lead Bromide PbBr2,Lead Chloride PbCl2,Lead Fluoride PbF2,Lead Iodide PbI2,Lead Oxide PbO,Lead Selenide PbSe,Lead Stannate PbSnO3,Lead Sulfide PbS,Lead Telluride PbTe,Lead Titanate PbTiO3,Lithium Li,Lithium Bromide LiBr, More Detail

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薄膜應用材料

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