濺鍍靶材,Sputtering Targets
濺鍍靶材 Sputtering Targets 矽晶圓背面金屬化
矽晶圓背面金屬化 :
矽晶圓半導體元件的製作於矽晶圓背面鍍上金屬膜層, 以便後續的封裝作業, 主要以蒸鍍製程,材料為 鈦Ti, 鎳 Ni, 銀Ag 等金屬為金屬膜層,銲接層: 金錫AuSn, 金鋅AuZn可降低銲接的熔點. 耗材包括 Mo/W 坩堝 ,石英晶體 (Quartz Crystal), 主要有 5MHz 及 6MHz 用於監測膜厚
Ti, Zr, Cr, Graphite/C, TiAl, TiSi,CrSi, CrAl,
TiCr, AlTiSi, AlCrSi
Al, Cu, Cr, Sus304, In, Sn, InSn,W/Cr, W Heater
ZrO2/Y2O3, YSZ),NiO/YSZ,LaSrMnO3-LSM, LaNiO3.
CeO2/Gd2O3, Ba2In2O5, La(Sr, Mg)GaO3
AlCu, AlSiCu, AlSi,Ti , Cu, Ta, Co , Al, Cu, Cr, Ti, NiV, WTi
ITO, Cr, Mo/Al, Nb, Si, SiO2, Mo, Al, Nb2O5
Si/SiAl, Zn, Sn, ZnAl, ZnSn, ZnSnSb, Ti/TiO2, Al, AlSi, Cr, Nb, Nb2O5 SiAl, Si, TiO2
ITO, SnO2, Cu, Cr, ITO, ZnO, AZO,Mo,CuInGa, CuInSe,InGaSe, CuSe,CuGa, CuIn, InSe, Cu, In, Ga, InGaZnO4,SrCu2O2, CuAlO2, CuCrO2SiAl, Si
Al, Ti, Ni, Ag, Au, ITO (95/5), AuGe, AuBe, AuAs, AuZn SiO2, ITO Tablet, Al Wire, IZO, ATO, AZO, MgAg, Au, LiF, CaO, In, ITO, IZO
NiCrSi,NiCrAl, CrSi, NiCrAlSi, TiCrAlSi, Cu,Ti, WTi, Ta, SiO2,CuNi, CuTi, CuSn, CuMnSn, NiTiSi,NiTiSn, CuMnNiSi, CuMnNiSn
│High Purity Materials 高純度材料│
│Special Metals Alloys 特殊金屬合金 │
│ Powder / Nano Materials 粉末及奈米材料│
│Special Ceramic Materials 特殊陶瓷材料│