濺鍍靶材,Sputtering Targets
濺鍍靶材 Sputtering Targets: 機殼鍍膜
手機殼, 電腦機殼機殼內部鍍上一層導電的金屬, 可防止內部電磁波外洩, 保護人體,避免干擾其他電子設備.
常用的材料: Al, Cu 高導電金屬靶材,並結合表面的裝飾鍍膜, 亦使用 Cr, Stainless 304,316 等材料.
生生產亦可以 W 加熱絲蒸鍍法, Al, Cu線進料, W 棒(鎢鍍鉻Cr)直接通電加熱另亦可鍍非導電金屬膜 NCVM(Non-Conducting Vapor Metallization):
使用 In, Sn, InSn, ITO 金屬合金, 藉由蒸鍍法成一薄膜, 藉著膜層不連續的特性, 達到高電阻的特性.
Ti, Zr, Cr, Graphite/C, TiAl, TiSi,CrSi, CrAl,
TiCr, AlTiSi, AlCrSi
ZrO2/Y2O3, YSZ),NiO/YSZ,LaSrMnO3-LSM, LaNiO3.
CeO2/Gd2O3, Ba2In2O5, La(Sr, Mg)GaO3
AlCu, AlSiCu, AlSi,Ti , Cu, Ta, Co , Al, Cu, Cr, Ti, NiV, WTi
Ti, Ni, Ag , AuSn,
ITO, Cr, Mo/Al, Nb, Si, SiO2, Mo, Al, Nb2O5
Si/SiAl, Zn, Sn, ZnAl, ZnSn, ZnSnSb, Ti/TiO2, Al, AlSi, Cr, Nb, Nb2O5 SiAl, Si, TiO2
ITO, SnO2, Cu, Cr, ITO, ZnO, AZO,Mo,CuInGa, CuInSe,InGaSe, CuSe,CuGa, CuIn, InSe, Cu, In, Ga, InGaZnO4,SrCu2O2, CuAlO2, CuCrO2SiAl, Si
Al, Ti, Ni, Ag, Au, ITO (95/5), AuGe, AuBe, AuAs, AuZn SiO2, ITO Tablet, Al Wire, IZO, ATO, AZO, MgAg, Au, LiF, CaO, In, ITO, IZO
NiCrSi,NiCrAl, CrSi, NiCrAlSi, TiCrAlSi, Cu,Ti, WTi, Ta, SiO2,CuNi, CuTi, CuSn, CuMnSn, NiTiSi,NiTiSn, CuMnNiSi, CuMnNiSn
│High Purity Materials 高純度材料│
│Special Metals Alloys 特殊金屬合金 │
│ Powder / Nano Materials 粉末及奈米材料│
│Special Ceramic Materials 特殊陶瓷材料│