蒸鍍,濺鍍,真空鍍膜物質使用對照表,PVD Table

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蒸鍍,濺鍍,真空鍍膜物質使用對照表 PVD Table

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物理氣相沉積法(Physical Vapor Deposition)

分為:濺鍍(Sputtering)及蒸鍍(Evaporation)是在高真空狀況下，利用電阻或電子束加熱,將所要蒸鍍的材料,以達到熔化溫度，使之熔解並氣化，氣態之薄膜材料之原子或分子因同時具有加溫後的動能附著在基板表面上的鍍膜技術。熱電阻式蒸鍍及電子束蒸鍍為常見之兩種方式:

22. Silicon (II) Oxide SiO,Silicon (IV) Oxide SiO2,Silicon (N-type) Si (N-type),Silicon (P-type) Si (P-type),Silicon Boride SiB6,Silicon Carbide SiC,Silicon Nitride Si3N4,Silicon Selenide SiSe,Silicon Sulfide SiS,Silicon Telluride SiTe2,Silver Ag,Silver Bromide AgBr More Detail

23. Silver Chloride AgCl,Silver Iodide AgI,Sodium Na,Sodium Bromide NaBr,Sodium Chloride NaCl,Sodium Cyanide NaCN,Sodium Fluoride NaF,Sodium Hydroxide NaOH,Spinel MgAI2O4,Strontium Sr,Strontium Chloride SrCl2,Strontium Fluoride SrF2, More Detail

24. Strontium Oxide SrO,Strontium Sulfide SrS,Strontium Titanate SrTiO3,Sulfur S,Supermalloy® † Ni/Fe/Mo,Tantalum Ta,Tantalum Boride TaB2,Tantalum Carbide TaC,Tantalum Nitride TaN,Tantalum Pentoxide Ta2O5,Tantalum Sulfide TaS2,Technetium Tc, More Detail

25. Tellurium Te,Terbium Tb,Terbium Fluoride TbF3,Terbium Oxide Tb2O3,Terbium Peroxide Tb4O7,Thallium Tl,Thallium Bromide TlBr,Thallium Chloride TlCl,Thallium Iodide TlI,Thallium Oxide Tl2O2,Thorium Th,Thorium Bromide ThBr4, More Detail

26. Thorium Carbide ThC2,Thorium Fluoride ThF4,Thorium Oxide ThO2,Thorium Oxyfluoride ThOF2,Thorium Sulfide ThS2,Thulium Tm,Thulium Oxide Tm2O3,Tin Sn,Tin Oxide SnO2,Tin Selenide SnSe,Tin Sulfide SnS,Tin Telluride SnTe, More Detail

27. Titanium Ti,Titanium (II) Oxide TiO,Titanium (III) Oxide Ti2O3,Titanium (IV) Oxide TiO2,Titanium Boride TiB2,Titanium Carbide TiC,Titanium Nitride TiN,Tungsten W,Tungsten Boride WB2,Tungsten Carbide WC,Tungsten Disulfide WS2,Tungsten Oxide WO3, More Detail

28. Tungsten Selenide WSe2,Tungsten Silicide WSi2,Tungsten Telluride WTe2,Uranium U,Uranium (II) Sulfide US,Uranium (III) Oxide U2O3,Uranium (IV) Oxide UO2,Uranium (IV) Sulfide US2,Uranium Carbide UC2,Uranium Fluoride UF4,Uranium Phosphide UP2,Vanadium V, More Detail

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