Indium Arsenide_InAs_III-V Croup Wafer_三五族化合物晶圓片:

Indium Arsenide_InAs_III-V Croup Wafer_三五族化合物晶圓片:

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新輔科技, Nutek Material,長期提供之晶體,晶圓片,基板,Crystals,Wafers,Substrates:

矽(Si)晶圓片,Sapphire Wafer,Al2O3,藍寶石晶圓片,III-V Croup Wafer,三五族化合物晶圓片,II-VI Group Wafer, 二六族化合物晶圓片,Glass / Ceramic Substrates,玻璃及陶瓷基板,Quartz,SiO2/SiC/SrTiO3 Wafer,石英/碳化矽/氧化鍶鈦晶圓片, Germanium /MgO Wafer,鍺 Ge/氧化鎂晶片,Single Crystal Substrates,單晶基板

GaInAsSbP_Wafer

Wafer	Diameter	Thickness	Conductivity	Grade	Type	Dopant	Orientation	Off orientation	Surface finish
Gallium Arsenide , GaAs	2 inch. 3 inch 4 inch.	350um	Semi-conducting or Semi-insulating	Epi polished or mechanical	P type or N type	Silicon Sulphure Tellurium Zinc Undoped	<100> <111> <110>	2 to 10 degree off	SSP or DSP
Gallium Phosphide, GaP	2 inch.	400um	Semi-conducting or Semi-insulating	Epi polished or mechanical	P type or N type	Silicon Sulphure Tellurium Zinc Undoped	<100> <111> <110>	2 to 10 degree off	SSP or DSP
Gallium Antimonide, GaSb	2 inch.	500um	Semi-conducting or Semi-insulating	Epi polished or mechanical	P type or N type	Silicon Sulphure Tellurium Zinc Undoped	<100> <111> <110>	2 to 10 degree off	SSP or DSP
Indium Arsenide , InAs	2 inch.	500um	Semi-conducting or Semi-insulating	Epi polished or mechanical	P type or N type	Silicon Sulphure Tellurium Zinc Undoped	<100> <111> <110>	2 to 10 degree off	SSP or DSP
Indium Phosphide, InP	2 inch. 3 inch.	500um	Semi-conducting or Semi-insulating	Epi polished or mechanical	P type or N type	Silicon Sulphure Tellurium Zinc Undoped	<100> <111> <110>	2 to 10 degree off	SSP or DSP

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│Special Metals Alloys 特殊金屬合金 │

│ Powder / Nano Materials 粉末及奈米材料│

│Special Ceramic Materials 特殊陶瓷材料│