Gallium Arsenide_GaAs_砷化鎵_III-V Croup Wafer,三五族化合物晶圓片

Gallium Arsenide_GaAs_砷化鎵_III-V Croup Wafer,三五族化合物晶圓片

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Gallium Arsenide_GaAs_砷化鎵_III-V Croup Wafer,三五族化合物晶圓片

Wafer	Diameter	Thickness	Conductivity	Grade	Type	Dopant	Orientation	Off orientation	Surface finish
Gallium Arsenide , GaAs	2 inch. 3 inch 4 inch.	350um	Semi-conducting or Semi-insulating	Epi polished or mechanical	P type or N type	Silicon Sulphure Tellurium Zinc Undoped	<100> <111> <110>	2 to 10 degree off	SSP or DSP
Gallium Phosphide, GaP	2 inch.	400um	Semi-conducting or Semi-insulating	Epi polished or mechanical	P type or N type	Silicon Sulphure Tellurium Zinc Undoped	<100> <111> <110>	2 to 10 degree off	SSP or DSP
Gallium Antimonide, GaSb	2 inch.	500um	Semi-conducting or Semi-insulating	Epi polished or mechanical	P type or N type	Silicon Sulphure Tellurium Zinc Undoped	<100> <111> <110>	2 to 10 degree off	SSP or DSP
Indium Arsenide , InAs	2 inch.	500um	Semi-conducting or Semi-insulating	Epi polished or mechanical	P type or N type	Silicon Sulphure Tellurium Zinc Undoped	<100> <111> <110>	2 to 10 degree off	SSP or DSP
Indium Phosphide, InP	2 inch. 3 inch.	500um	Semi-conducting or Semi-insulating	Epi polished or mechanical	P type or N type	Silicon Sulphure Tellurium Zinc Undoped	<100> <111> <110>	2 to 10 degree off	SSP or DSP

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