
| Wafer Size: | 1 inch./2 inch./3 inch./4 inch. |
| Substrate Size: | 5 x 5 mm/10 x 10mm /20 x 20 mm |
| Thickness | 0.5 mm /0.8mm/1.0 mm |
| Growth method | Flame fusion / Verneuil method |
| Crystal Orientation/Structure | Tolerance of orientation :+/- 0.5 ° / Cubic:<100> , <111> , <110> |
| Dielectric/Lattice Constant | 300 /3.905 A |
| Surface | SSP/DSP_Ra: no more than 10 A |
| SrTiO3 Nb doped 1.0 %wt | Resistivity:0.0035 / Mobility: 9.0 |
| SrTiO3 Nb doped 0.7%wt | Resistivity:0.007/ Mobility: 8.5 |
| SrTiO3 Nb doped 0.4 %wt | Resistivity:0.05 / Mobility: 6.5 |
| SrTiO3 Nb doped 0.1 %wt | Resistivity:0.08 / Mobility: 6.5 |