標準規格 Standard Specification Silicon Wafers 矽(Si)晶片長備庫存

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Standard_Specification-Si Wafer_標準規格-矽晶片, Non-Standard_Specification-Si Wafer_非標準規格_矽晶片
Special_Specification-Si Wafer_特殊規格_矽晶片 Custom Films, 鍍膜服務片, Ultra Flat, Intrinsic_Silicon Wafer, Ultra Thin_Silicon Wafer, Epi_Silicon Wafer, Ultra-Thick_Silicon Wafer, Thermal-Oxide_Silicon Wafer, Special-Orientation_Silicon Wafer, Silicon Nitride ( Si3N4 ) Silicon Wafer, Heavily Doped Wafer Silicon Wafer,SOI ( Silicon-on-Insulator)Silicon Wafer, Off Axis Orientation Silicon Wafer, High Resistivity Silicon Wafer.

272: 100mm, P type, Boron, <100>,0.044 – 0.048 ohm-cm, 500􀳦25􀳦m, Double Side Polish w/ 2Semi Std Flat

273: 100mm, P type, Boron, <100> ON, 1-20 ohm cm, 1000um+/-25, TTV<5um, Double SidePolished, Prime

274: 100mm, P type, Boron, <100> ON, 1-5 ohm cm, 525um+/-25, TTV<5um, Double Side Polished,Prime

275: 100 mm, P type, Boron, <100> ON,10-20 ohm cm, 525 um +/- 25, TTV <5 um, Double SidePolished, Prime

276: 100 mm, P type, Boron, <100> ON, 5-10 ohm cm, 525 um +/- 25, TTV <5um, Double SidePolished, Prime

277: 100mm+/- 0.5, P type, Boron, <100> ON, 1-5 ohm cm, 555um+/-20, TTV <3um, Etched

278: 100mm +/-0.5, P type/ Boron, <100> ON, 10-20 ohm cm, 525um +/-20, TTV: <10um, Prime, 5kAwet oxide

◊4" Si wafer 第◊ 1 ◊ 2◊ 3◊ 4◊ 5◊ 6◊ 7◊ 8◊ 9◊ 10◊ 11◊ 12◊ 頁;

279: 100mm +/-0.5, P type/ Boron, <100> ON, 5-10 ohm cm, 525um +/-20, TTV: <10um, Prime, 3kAwet oxide

280: 100mm, P type, Boron, <111> OFF 4, 0.01-0.02 ohm-cm, 525um +/- 20, TTV <5um, Prime

281: 100mm, P type, Boron, <111> ON, 0.01-0.02 ohm-cm, 525um +/- 25, TTV <10um, Prime

282: 100mm, P type, Boron, <111> ON, 0.2-0.3 ohm cm, 525um-25, TTV <10um, Prime

283: 100mm, P type, Boron, <111> ON, 0.2-0.3 ohm cm, 525um-25, TTV <10um, Prime

284: 100mm, P type, Boron, <111> ON, 0.5-0.75 ohm cm, 525um-20, TTV <5um, Single SEMI Flat,Prime

285: 100mm, P type, Boron, <111> ON, 0.5-0.75 ohm cm, 525um-25, TTV <10um, Single SEMI Flat,Prime

◊ 2"◊ 3"◊ 4"◊ 5"◊ 6"◊ 8"◊ Si wafer

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